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IRF640,127: MOSFET N-CH 200V 16A TO-220AB

IRF640,127 Data Sheet

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Part Number:: IRF640,127
Mfg:
Supply Ability:: 5000

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IRF610 evaluate
US $.83 - .91 / Piece

MOSFET N-Chan 200V 3.3 Amp
IRF610, SiHF610 evaluate
DescriptionPower MOSFET IRF610, SiHF610
IRF610_R4941 evaluate
MOSFET TO-220AB N-Ch Power

Product Details

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Series:	TrenchMOS™	Manufacturer:	NXP Semiconductors
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	200V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	16A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	180 mOhm @ 8A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	63nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1850pF @ 25V
Power - Max:	136W	Mounting Type:	Through Hole
Package / Case:	TO-220-3	Supplier Device Package:	TO-220AB

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Drain to Source Voltage (Vdss): 200V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 136W
Input Capacitance (Ciss) @ Vds: 1850pF @ 25V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V

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IRF640,127

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