MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 27 A | ||
| Resistance Drain-Source RDS (on) : | 3.4 mOhms | Configuration : | Single Dual Drain Dual Source | ||
| Package / Case : | Direct-FET MT | Packaging : | Reel |
| Technical/Catalog Information | IRF6603TR1 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 27A |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 6590pF @ 15V |
| Power - Max | 3.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 72nC @ 4.5V |
| Package / Case | DirectFET? Isometric MT |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6603TR1 IRF6603TR1 |