MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 23 A | ||
| Resistance Drain-Source RDS (on) : | 3.4 m Ohms | Configuration : | Single Quad Drain Dual Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | Direct-FET MT | Packaging : | Reel |
| Technical/Catalog Information | IRF6613TR1 |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 23A |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 23A, 10V |
| Input Capacitance (Ciss) @ Vds | 5950pF @ 15V |
| Power - Max | 2.8W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 63nC @ 4.5V |
| Package / Case | DirectFET? Isometric MT |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF6613TR1 IRF6613TR1 IRF6613TR1CT ND IRF6613TR1CTND IRF6613TR1CT |