MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
IRF6644TR1PBF: MOSFET MOSFT 100V 60A 13mOhm 35nC Qg
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10.3 A | ||
| Resistance Drain-Source RDS (on) : | 10.3 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | Direct-FET MN | Packaging : | Reel |
| Technical/Catalog Information | IRF6644TR1PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 10.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 2210pF @ 25V |
| Power - Max | 2.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 47nC @ 10V |
| Package / Case | DirectFET? Isometric MN |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6644TR1PBF IRF6644TR1PBF IRF6644TR1PBFTR ND IRF6644TR1PBFTRND IRF6644TR1PBFTR |