IRF6691

Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 1.8 m Ohms
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 32 A
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MT


Application

Application Specific MOSFETs
Integrates Monolithic Trench Schottky Diode
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Reverse Recovery Losses
Low Switching Losses
Low Reverse Recovery Charge and Low Vf
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12
ID @ TC= 25°C	Continuous Drain Current, VGS @ 10V	180	A
ID @ TA= 25°C	Continuous Drain Current, VGS @ 10V	32
ID @ TA= 70°C	Continuous Drain Current, VGS @ 10V	26
IDM	Pulsed Drain Current	260
PD @ TC= 25°C	Power Dissipation	2.8	W
PD @ TA= 25°C	Power Dissipation	1.8
PD @ TA= 70°C	Power Dissipation	89
	Linear Derating Factor	0.022	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Parameters:

Technical/Catalog Information	IRF6691
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	1.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	6580pF @ 10V
Power - Max	2.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	71nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6691 IRF6691 IRF6691CT ND IRF6691CTND IRF6691CT