IRF710

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 3.6 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

• 2.0A, 400V
• r_DS(ON) = 3.600W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount
   Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .V_DS
Drain to Gate Voltage (R_GS = 20kW) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .I_D
   TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .. . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .  . . . . . .V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
   Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .  . . .. . . . . .  . . . . . . . . . T_L
   Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . T_pkg


Description

This N-Channel enhancement mode silicon gate power field effect transistor of the IRF710 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type TA17444.