IRF710

MOSFET N-Chan 400V 2.0 Amp

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IRF710 Picture
SeekIC No. : 00158756 Detail

IRF710: MOSFET N-Chan 400V 2.0 Amp

floor Price/Ceiling Price

US $ .73~.79 / Piece | Get Latest Price SeekIC Live Chat
Part Number:
IRF710
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~730
  • 730~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.79
  • $.76
  • $.74
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2014-4-22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 3.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 3.6 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

• 2.0A, 400V
• rDS(ON) = 3.600W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount
   Components to PC Boards"



Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kW) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .ID
   TC = 100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .. . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .  . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
   Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .  . . .. . . . . .  . . . . . . . . . TL
   Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . ... . . . . . . . . . . . . . . . Tpkg



Description

This N-Channel enhancement mode silicon gate power field effect transistor of the IRF710 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly developmental type TA17444.




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