MFG:IR Package Cooled:SOP-8 D/C:07+
MFG: IR
Package Cooled: SOP-8
D/C: 07+
Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 pac...
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V |
3 |
A |
|
ID @ TC =100 |
Continuous Drain Current VGS @ 10V |
2.5 | |
|
IDM |
Pulsed Drain Current |
25 | |
|
PD @ TC = 25 |
Max. Power Dissipation |
2.4 |
W |
|
Linear Derating actor |
16 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
22 |
mJ |
|
IAR |
Avalanche Current |
See Fig.16c, 16d, 19, 20 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ | |
|
dV/dt |
Peak Diode Recovery dv/dt |
12 |
V/ns |
|
TJ |
Operating Junction |
-55 to 170 |
|
|
TSTG |
Storage Temperature Range |
IRF034
PDF/DataSheet Download
Specifically designed for Automotive applications IRF7103Q, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qua...
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