MFG:IR Package Cooled:SO8 D/C:05+
MFG: IR
Package Cooled: SO8
D/C: 05+
Description: Fifth Generation HEXFETs from lnternational Rectifierutilize advanced pro cessing techniques to achieve extremely lo...
Fifth Generation HEXFETs from lnternational Rectifierutilize advanced pro cessing techniques to achieve extremely low on-resistance per siling speed and ruggedized device with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for,provides the designer with an extremely efficient and reliable device for use in awide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabilty making it ideal in a variety of power applications,With these improvements,multiple devices can be used in an application with dramatically reduced board space.The package is designed for vapor phase,infra red,or wave soldering techniques.Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
|
Parameter |
Max |
Units | |
|
ID @ TA =25 |
Continuous Drain Current,VGS @ 10V |
-2.3 |
A |
|
ID @ TA = 70 |
Continuous Drain Current,VGS @ 10V |
-1.8 | |
|
IDM |
Pulsed Drain Current |
-10 | |
|
PD @ TC=25 |
Power Dissipation |
2.0 |
W |
| Linear Derating Factor |
0.016 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±12 |
V |
|
dv/dt |
Peak Diode Recovey dv/dt |
-3.0 |
V/nS |
|
TJ,TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
·Adavanced Process Technology
·Ultra Low On-Resistance
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching
·Lead-Free
IRF034
PDF/DataSheet Download
Fourth Generation HEXFETs IRF7104 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET...
MOSFET N-CH 50V 3A 8-SOIC
MOSFET N-CH 50V 3A 8-SOIC
MOSFET N-CH 50V 3A 8-SOIC
MOSFET N-CH 50V 3A 8-SOIC
Specifically designed for Automotive applications IRF7103QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...
Price: 3.5-6.5 USD
2Channel, 10Bit, 60MSPS, LM98516CCMT, TSSOP, National Semiconductor, AFE
Price: 0.9-1.3 USD
3.0-Volt single-power Flash memory, TSOP, –0.5 V to +4.0 V, 200 mA, Single power supply operation
Price: 1-10 USD
7289BP, DIP, IC, Zilog
Price: 0.58-0.87 USD
8-bit Flash-based Microcontroller, -0.3V to +7.5V, 250 mA, 1.0W, High-performance, DIP
Price: 478-488 USD
Matrix TFT, Liquid Crystal Display, VSS-0.5 to 6.0V, 3.0 to 8.0mArms, Low power consumption
Price: 15-20 USD
MC-5781C, Okuma, Integrated Circuits (ICs), ZIP-16
Price: 0.2-0.45 USD
TPS9126PWR, TSSOP, Texas Instruments
Price: 1-2 USD
IC REGULATOR POS 5V TO-220 - L7805CV
Price: 1.2-1.5 USD
TPS54373 - 3-V TO 6-V INPUT,3-A OUTPUT SYNCHRONOUS BUCK SWITCHER WITH DISABLED SINKING DURING STAR...
Price: 200-220 USD
MITSUBISHI CPU A0J2HCPU
Price: 1.07-1.12 USD
non-volatile memory, TSOP-48, 2.7 to 3.6V
Price: 10-20 USD
Controller Hub, 8-Bit Hub Interface, 421 BGA
