Mounting Style
: SMD/SMT
Transistor Polarity
: P-Channel
Drain-Source Breakdown Voltage
: - 20 V
Gate-Source Breakdown Voltage
: 12 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: SOIC-8
Configuration
: Dual
Continuous Drain Current
: - 2.3 A
Resistance Drain-Source RDS (on)
: 0.250 Ohms
Features: ·Adavanced Process Technology
·Ultra Low On-Resistance
·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching
·Lead-Free
Specifications
|
|
Parameter |
Max |
Units |
|
ID @ TA =25 |
Continuous Drain Current,VGS @ 10V |
-2.3 |
A |
|
ID @ TA = 70 |
Continuous Drain Current,VGS @ 10V |
-1.8 |
|
IDM |
Pulsed Drain Current |
-10 |
|
PD @ TC=25 |
Power Dissipation |
2.0 |
W |
|
|
Linear Derating Factor |
0.016 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±12 |
V |
|
dv/dt |
Peak Diode Recovey dv/dt |
-3.0 |
V/nS |
|
TJ,TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
|
DescriptionFifth Generation HEXFETs IRF7104PbF from lnternational Rectifierutilize advanced pro cessing techniques to achieve extremely low on-resistance per siling speed and ruggedized device with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for,provides the designer with an extremely efficient and reliable device for use in awide variety of applications.
The SO-8 IRF7104PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabilty making it ideal in a variety of power applications,With these improvements,multiple devices can be used in an application with dramatically reduced board space.The package is designed for vapor phase,infra red,or wave soldering techniques.Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Parameters: | Technical/Catalog Information | IRF7104PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.3A |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 15V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7104PBF
IRF7104PBF
|
IRF7104PBF Data Sheet
