IRF7105PbF

The IRF7105PbF is designed as one kind of insulated gatebipolar transistor which producted by the  International Rectifier.Featrues of the IRG4BC30K-SPbF are:(1)hign short circuit rating optimized for motor control,Tsc=10 us,@360 V Vce(start),Tj=125,Vge=15 V;(2)combines low conduction losses with high switching speed;(3)lastest generation design provides tighter parameter distribution and higher efficiency than previous generations;(4)lead-free.

Benefits of the IRF7105PbF are:(1)as a freewheeling diode we recommend our HEXFRED ultrafast,ultrasoft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT;(2)lastest generation 4 IGBTs offer highest power density motor controls possible;(3)this part replaces the IRG4BC30K-S and IRG4BC30M-S devices.

The absolute maximum ratings of the IRF7105PbF can be summarized as:(1)collector-to-emitter voltage:600 V;(2)comtinuous collector current:28 A;(3)continuous collector current:16 A;(4)pulsed collector current:58 A;(5)clamped inductive load current:58 A;(6)gate-to-emitter voltage:+/-20 V;(7)reverse voltage avalanche energy:260 mJ;(8)maximum power dissipation:100 W;(9)operating junction and storage temperature range:-55 to +150;(10)soldering temperature,for 10 sec.:300.If you want to know more information about this part,please download the datasheet in www.seekic.com and www.chinaicmart.com .