Position: Home  > All Categories> Integrated Circuits (ICs) > IRF7106

IRF7106

Features: * Advanced Process Technology* Ultra Low On-Resistance* Dual N and P Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter Max. Units N-Channel P-Channel ID @ TC = 25 Continuous Drain Current, V GS...

product image

IRF7106 Picture
See larger image
SeekIC No. : 004376688 Detail

IRF7106: Features: * Advanced Process Technology* Ultra Low On-Resistance* Dual N and P Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications ...

IRF7106 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF7106
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/3

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* Advanced Process Technology
* Ultra Low On-Resistance
* Dual N and P Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching


Pinout

Connection Diagram


Specifications

  Parameter Max. Units
N-Channel P-Channel
ID @ TC = 25 Continuous Drain Current, V GS @ 10V 3.0 -2.5 A
ID @ TC = 70 Continuous Drain Current, V GS @ 10V 2.5 -2.0
IDM Pulsed Drain Current 10 -10
PD @TC = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 3.0 -3.0 V/ns
TJ, TSTG Junction and Storage Temperature Range 55 to + 150



Description

Fourth Generation HEXFETs of the IRF7106 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 of the IRF7106 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
RF and RFID
X3C26P1-30S
1P620S
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
LED Products
LM24P20
KCG057QV1DB-G770
View more