MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
| Symbol | Parameter | IRF710B | IRFS710B | Units |
| VDSS | Drain-Source Voltage | 400 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
2.0 | 2.0 * | A |
| 1.3 | 1.3 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 6.0 | 6.0 * | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ | |
| IAR | Avalanche Current (Note 1) | 2.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.6 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
36 | 23 | W |
| 0.29 | 0.19 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
IRF710B
PDF/DataSheet Download
Fourth Generation HEXFETs of the IRF7107 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for ...
Fourth Generation HEXFETs of the IRF7106from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for w...
MOSFET N+P 25V 2.3A 8-SOIC
MOSFET N+P 25V 2.3A 8-SOIC
MOSFET N/P-CH DUAL 25V 8-SOIC
MOSFET N/P-CH 20V 8-SOIC
Price: 0.7-1 USD
16K memory, DIP, -0.6V to +6.25V, Fast Read Access Time, Low Power
Price: 20-50 USD
Erasable Programmable Logic Device, PGA, 500 mA, –2.0V to +7.0V, CMOS EPROM cells
Price: 50-100 USD
westcode transistor module, 2500V, high DC current gain, VCBO 600 V, 200 A at 1msec, PC 400 W
Price: 8.1-8.73 USD
14-bit resolution high-performance, low-power, CMOS analog-to-digital converter, SOIC24
Price: 1-5 USD
High Performance CPLD, 64-VQFP , 3.3V or 2.5V output capability, 178 MHz System frequency
Price: 0.118-0.12 USD
low voltage (2.7–5.5V), General Purpose, SOT-23-5 , Rail-to-Rail Output Operational Amplifier
Price: 32.4-36 USD
240QFN, 32-Bit RISC microprocessor, Load-store architecture, Delayed branch instructions
Price: 0.45-0.5 USD
high voltage, high speed, power MOSFET and IGBT driver, 16-SOIC
Price: 0.35-1.5 USD
OP07CDR - PRECISION OPERATIONAL AMPLIFIERS - Texas Instruments
Price: 10-14 USD
microcontroller, DIP-64, –0.5 to +6.5 V
Price: 1-2 USD
intergrated multi-port repeater, 64-pin, PQFP
Price: 0.8-2 USD
TOSHIBA Photocoupler, MOS FET gate drive, Industrial inverter, 6SMD, ±0.6 A, 10 to 30 V, 700 ns
