IRF7201

MOSFET N-CH 30V 7.3A 8-SOIC

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IRF7201 Picture
SeekIC No. : 003430781 Detail

IRF7201: MOSFET N-CH 30V 7.3A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7201
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 7.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 28nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 550pF @ 25V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 7.3A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 25V


Features:

* Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
VDS Drain- Source Voltage 30 V
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 7.3 A
ID @ TC = 70 Continuous Drain Current, VGS @ 10V 5.8
IDM Pulsed Drain Current 58
PD @TC = 25 Power Dissipation 2.5 W
PD @TC = 70 Power Dissipation 1.6
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy 70 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

Fifth Generation HEXFET® power MOSFETs IRF7201 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7201 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




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