MFG:IR Package Cooled:SOP-8 D/C:09+
MFG: IR
Package Cooled: SOP-8
D/C: 09+
Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced pr...
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
|
Parameter |
Max. |
Units | |
|
VDS |
Drain- Source Voltage |
30 |
V |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V |
7.3 |
A |
|
ID @ TC = 70 |
Continuous Drain Current VGS @ 10V |
5.8 | |
|
IDM |
Pulsed Drain Current |
58 | |
|
PD @ TC = 25 |
Power Dissipation |
2.5 |
W |
|
PD @ TC = 70 |
Power Dissipation |
1.5 | |
| Linear Derating Factor |
0.02 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
VGSM |
Gate-to-Source Voltage Single Pulse tp<10µs |
30 |
V |
|
EAR |
Repetitive Avalanche Energy |
70 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ ,TSTG |
Junction and Storage Temperature Range |
-55 to 150 |
IRF034
PDF/DataSheet Download
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