IRF7201PBF

MOSFET

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IRF7201PBF Picture
SeekIC No. : 00153359 Detail

IRF7201PBF: MOSFET

floor Price/Ceiling Price

US $ .23~.68 / Piece | Get Latest Price
Part Number:
IRF7201PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.68
  • $.4
  • $.24
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 50 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 50 mOhms


Features:

· Generation V Technology
·Ultra Low On-Resistance
· N-Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
·Fast Switching
· Lead-Free



Specifications

Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TC = 25
Continuous Drain Current VGS @ 10V
7.3
A
ID @ TC = 70
Continuous Drain Current VGS @ 10V
5.8
IDM
Pulsed Drain Current
58
PD @ TC = 25
Power Dissipation
2.5
W
PD @ TC = 70
Power Dissipation
1.5
Linear Derating Factor
0.02
W/
VGS
Gate-to-Source Voltage
±20
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µs
30
V
EAR
Repetitive Avalanche Energy
70
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ ,TSTG
Junction and Storage Temperature Range
-55 to 150

 




Description

Fifth Generation HEXFET® power MOSFETs IRF7201PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7201PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




Parameters:

Technical/Catalog InformationIRF7201PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs30 mOhm @ 7.3A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7201PBF
IRF7201PBF



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