IRF7204PbF

      The featrues of IRF7204PbF are Adavanced Process Technology, Ultra Low On Resistance, a P-Channel MOSFET, Surface Mount, a Available in Tape & Reel, Dynamic dv/dt Rating, Fast Switching, Lead-Free.Fourth Generation HEXFETs from International Rectitier utilize advanced processing techniques to achieve the lowest possible on.resistance per silicon area, This benelit, combined with the fast switching speed and ruggedized device design that HE><FET Power MOSFETs are well known far, provides the designer with an extremely efficient device for use in a wide variety of applications.
      The SO-8 IRF7204PbF has been modilied through a customized leadframe for enhanced thermal characteristics and dual.die ospsoility making it ideal in a variety or power applications With these improvements, multiple devices can be used in an application vvith dramatioally reduced board spacer The package is designed for vapor phase, infra red, or wave saldering techniques. Power dissipation of greater than o,sW is possible in typical PCB mount application.
      The parameters of the IRF7204PbF are ,VGS (Gate-to-Source Voltage)=±12V, ID @ TC= 25°C   (Continuous Drain Current, VGS @ 10V)=-5.3A, ID @ TC = 70°C (Continuous Drain Current, VGS @ 10V )=-4.2A,  IDM (Pulsed Drain Current)=-21A, PD (@Tc = 25°C Power Dissipation)=2.5W, dv/dt( Peak Diode Recovery dv/dt) =-1.7V/ns, TJ (Operating Junction and)= -55  to + 150°C=TSTG, RJC( Junction-to-Case )=0.83°C/W, RJA( Junction-to-Ambient )=50°C/W.