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IRF7233

MOSFET P-CH 12V 9.5A 8-SOIC

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SeekIC No. : 003431495 Detail

IRF7233: MOSFET P-CH 12V 9.5A 8-SOIC

IRF7233 Data Sheet

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Part Number:
IRF7233
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) @ Vgs: 74nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6000pF @ 10V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 9.5A
Series: HEXFET®
Packaging: Tube
Input Capacitance (Ciss) @ Vds: 6000pF @ 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 74nC @ 5V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V


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