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MFG:IR  Package Cooled:SOP-8  D/C:09+  

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Part Number: IRF7233PbF

 

MFG: IR

Package Cooled: SOP-8

D/C: 09+

Description: These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve...


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IRF7233PbF General Description


These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase,infrared, or wave soldering techniques.

IRF7233PbF Maximum Ratings

 
Parameter
Max.
Unit
VDS Drain- Source Voltage
-12
V
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V
±9.5
A
ID @ TA= 70 Continuous Drain Current, VGS @ -4.5V
±6.0
A
IDM Pulsed Drain Current 1
±76
A
PD @TA = 25 Power Dissipation
2.5
W
PD @TA = 70 Power Dissipation
1.6
W
  Linear Derating Factor
0.02
W/
EAS Single Pulse Avalanche Energy 4 60 mJ
VGS Gate-to-Source Voltage ±12 V
TJ,TSTG Junction and Storage Temperature Range -55 to + 150 W/
1.Repetitive rating; pulse width limited by max. junction temperature.
4 Starting TJ = 25, L = 1.3mH RG = 25, IAS = 9.5A.

IRF7233PbF Features

· Ultra Low On-Resistance
· P-Channel MOSFET
· Surface Mount
· Available in Ta

IRF7233PbF Connection Diagram

IRF7233PbF Connection Diagram

IRF7233PbF datasheet

IRF034
PDF/DataSheet Download

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