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MFG:IR  Package Cooled:SOP-8  D/C:09+  

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Part Number: IRF7241

 

MFG: IR

Package Cooled: SOP-8

D/C: 09+

Description: New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processi...


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IRF7241 General Description


New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

IRF7241 Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage -40 V
ID @ TC = 25 Continuous Drain Current, VGS @ -10V -6.2 A
ID @ TC = 70 Continuous Drain Current, VGS @ -10V -4.9
IDM Pulsed Drain Current  -25
PD @TC = 25 Power Dissipation 2.5 W
PD @TC = 70 Power Dissipation 1.6
  Linear Derating Factor 20 mW/
VGS Gate-to-Source Voltage ± 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7241 Features

* Trench Technology
* Ultra Low On-Resistance
* P-Channel MOSFET
* Available in Tape & Reel

IRF7241 Connection Diagram

IRF7241 Connection Diagram

IRF7241 datasheet

IRF7241
PDF/DataSheet Download

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