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MFG:IR  Package Cooled:SOP-8  D/C:09+  

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Part Number: IRF7241PbF

 

MFG: IR

Package Cooled: SOP-8

D/C: 09+

Description: New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processi...


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IRF7241PbF General Description


New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

IRF7241PbF Maximum Ratings
Parameter
Max.
Units
VDS
 Drain- Source Voltage
-40
V
ID @ TA = 25
 Continuous Drain Current, VGS @ 10V
-6.2
A
ID @ TA = 70
 Continuous Drain Current, VGS @ 10V
-4.9
IDM
 Pulsed Drain Current
-25
PD @TA = 25
 Power Dissipation
2.5
W
PD @ TA = 70
 Power Dissipation
1.6
 Linear Derating Factor
20
mW/
VGS
 Gate-to-Source Voltage
±20
V
TJ ,TSTG
 Junction and Storage Temperature Range
-55 to + 150

IRF7241PbF Features

· Trench Technology
· Ultra Low On-Resistance
· P-Channel MOSFET
· Available in Tape & Reel
· Lead-Free

IRF7241PbF Connection Diagram

IRF7241PbF Connection Diagram

IRF7241PbF datasheet

IRF034
PDF/DataSheet Download

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