IRF7309QPBF

MOSFET

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IRF7309QPBF Picture
SeekIC No. : 00159372 Detail

IRF7309QPBF: MOSFET

floor Price/Ceiling Price

Part Number:
IRF7309QPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 80 mOhms Mounting Style : SMD/SMT
Package / Case : SOIC-8    

Description

Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Transistor Polarity : N and P-Channel
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 80 mOhms


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· Dual N and P Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free



Specifications

  Connection Diagram


Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7309QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7309QPbF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.




Parameters:

Technical/Catalog InformationIRF7309QPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4A, 3A
Rds On (Max) @ Id, Vgs50 mOhm @ 2.4A, 10V
Input Capacitance (Ciss) @ Vds *
Power - Max1.4W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 4.5V
Package / Case8-SOIC
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7309QPBF
IRF7309QPBF



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