IRF730APBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.5 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1 Ohm at 10 V


Application

 · Switch Mode Power Supply (SMPS)
 · Uninterruptable Power Supply
 · High speed power switching
 · Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ -10V	5.5	A
ID @ TA = 100°C	Continuous Drain Current, VGS @ -10V	3.5	A
IDM	Pulsed Drain Current	22	A
PD @TA = 25°C	Maximum Power Dissipation	74	W
	Linear Derating Factor	0.6	mW/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	4.6	V/ns
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 50	°C
	Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw	300 (1.6mm from case) 10 lbf•in (1.1N•m)	°C