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IRF730AS

MOSFET N-Chan 400V 5.5 Amp

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SeekIC No. : 00165305 Detail

IRF730AS: MOSFET N-Chan 400V 5.5 Amp

IRF730AS Data Sheet

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Part Number:
IRF730AS
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5.5 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 1 Ohms


Application

 Switch Mode Power Supply (SMPS)
 Uninterruptable Power Supply
 High speed power switching


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C
 Continuous Drain Current, VGS @ 10V†
5.5
A
ID @ TC = 100°C
 Continuous Drain Current, VGS @ 10V†
3.5
IDM
 Pulsed Drain Current †
22
PD @TC = 25°C
 Power Dissipation
74
W
 Linear Derating Factor
0.6
W/°C
VGS
 Gate-to-Source Voltage
± 30
V
dv/dt
 Peak Diode Recovery dv/dt Ġ
4.6
V/ns
TJ
 Operating Junction and
-55 to + 150
°C
TSTG
 Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )



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