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MFG:IOR  D/C:00+01+05+  

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Part Number: IRF7314Q

 

MFG: IOR

 

D/C: 00+01+05+

Description: Specifically designed for Automotive applications, these HEXFET ® Power MOSFET's in a Dual SO-8 pa...


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IRF7314Q General Description


Specifically designed for Automotive applications, these HEXFET ® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

IRF7314Q Maximum Ratings

Parameter
Max.
Units
VDS
 Drain-Source Voltage
-20
V
ID @ TA = 25°C
 Continuous Drain Current, VGS @ 10V
-5.2
A
ID @ TA = 70°C
 Continuous Drain Current, VGS @ 10V
-4.3
IDM
 Pulsed Drain Current
-43
PD @TA = 25°C
 Maximum Power Dissipation
2.4
W
PD @TA = 70°C
 Maximum Power Dissipation
1.7
W
 Linear Derating Factor
16
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
EAS
 Single Pulse Avalanche Energy
610
mJ
IAR
 Avalanche Current
-5.2
A
EAR
 Repetitive Avalanche Energy
See Fig.14, 15, 16
mJ
TJ , TSTG
 Junction and Storage Temperature Range
-55 to + 175
°C

IRF7314Q Typical Application

•  Anti-lock Braking Systems (ABS)
•  Electronic Fuel Injection
•  Air bag

IRF7314Q datasheet

IRF7314Q
PDF/DataSheet Download

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