Purchase IRF7319, In-stock IRF7319 From SeekIC.
Part Number: IRF7319
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
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IRF7319
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DataSheet
General Description
IRF7319 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application withdramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
IRF7319 Maximum Ratings
| Symbol | Maximum | Units | |||
| N-Channel | P-Channel | ||||
| Drain-Source Voltage | VDS | 30 | -30 | V | |
| Gate-Source Voltage | VDS | ± 20 | |||
| Continuous Drain Current | TA = 25 | ID | 6.5 | -4.9 | A |
| TA = 70 | 5.2 | -3.9 | |||
| Pulsed Drain Current | IDM | 30 | -30 | ||
| Continuous Source Current (Diode Conduction) | IS | 2.5 | -2.5 | ||
| Maximum Power Dissipation | TA = 25 | PD | 2.0 | W | |
| TA = 70 | 1.3 | ||||
| Single Pulse Avalanche Energy | EAS | 82 | 140 | mJ | |
| Avalanche Current | IAR | 4.0 | -2.8 | A | |
| Repetitive Avalanche Energy | EAR | 0.20 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | -5.0 | V/ ns | |
| Junction and Storage Temperature Range | TJ, TSTG | -55 to + 150 | |||
IRF7319 Features
* Generation V Technology
* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Fully Avalanche Rated
* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Fully Avalanche Rated
IRF7319 Connection Diagram
IRF7319
PDF/DataSheet Download
- Datasheet: IRF7319
- File Size: 140457 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
IRF7319 Relative Products
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IRF7317TR
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IRF7317PBF
MOSFET N+P 20V 5.3A 8-SOIC
IRF7317
Fifth Generation HEXFETs IRF7317 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
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IRF7316TRPBF
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IRF7316QTRPBF
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