IRF7321D2

Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 4.7A
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Series: FETKY™
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds: 710pF @ 25V


Features:

*Co-packaged HEXFET^® Power
MOSFET and Schottky Diode
* Ideal For Buck Regulator Applications
* P-Channel HEXFET^®
* Low VF Schottky Rectifier
* Generation 5 Technology
* SO-8 Footprint




Pinout






Specifications

Parameter		Maximum	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -10V	-4.7	A
ID @ TA = 70		-3.8
IDM	Pulsed Drain Current	-38
PD @TA = 25	Power Dissipation	2.0	W
PD @TA = 25		1.3
	Linear Derating Factor	16	mW/
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150

Description

The FETKY^TM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2 offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7321D2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.