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IRF7321D2PBF Picture
SeekIC No. : 00153130 Detail


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US $ .28~.7 / Piece | Get Latest Price
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International Rectifier
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Upload time: 2018/5/26

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 4.9 A
Resistance Drain-Source RDS (on) : 98 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    


Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 98 mOhms
Continuous Drain Current : - 4.9 A


Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint


Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.7 A
ID @ TA = 70°C -3.8
IDM Pulsed Drain Current -38
PD @TA = 25°C Power Dissipation 2.0 w
PD @TA = 70°C 1.3
  Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C


The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2PbF offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7321D2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.


Technical/Catalog InformationIRF7321D2PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs62 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds 710pF @ 25V
Power - Max2W
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7321D2PBF

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