IRF7321D2PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 98 mOhms
Continuous Drain Current : - 4.9 A


Features:

Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low V_F Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free


Specifications

Parameter		Maximum	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ -10V	-4.7	A
ID @ TA = 70°C		-3.8
IDM	Pulsed Drain Current	-38
PD @TA = 25°C	Power Dissipation	2.0	w
PD @TA = 70°C		1.3
	Linear Derating Factor	16	mW/°C
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150	°C

Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2PbF offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7321D2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7321D2PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.7A
Rds On (Max) @ Id, Vgs	62 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	710pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7321D2PBF IRF7321D2PBF