IRF7321D2PBF

MOSFET

product image

IRF7321D2PBF Picture
SeekIC No. : 00153130 Detail

IRF7321D2PBF: MOSFET

floor Price/Ceiling Price

US $ .28~.7 / Piece | Get Latest Price
Part Number:
IRF7321D2PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.7
  • $.43
  • $.3
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2017/1/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 4.9 A
Resistance Drain-Source RDS (on) : 98 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 30 V
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 98 mOhms
Continuous Drain Current : - 4.9 A


Features:

Co-packaged HEXFET® Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET®
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
Lead-Free



Specifications

Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.7 A
ID @ TA = 70°C -3.8
IDM Pulsed Drain Current -38
PD @TA = 25°C Power Dissipation 2.0 w
PD @TA = 70°C 1.3
  Linear Derating Factor 16 mW/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C



Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7321D2PbF offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7321D2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.




Parameters:

Technical/Catalog InformationIRF7321D2PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs62 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds 710pF @ 25V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF7321D2PBF
IRF7321D2PBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optical Inspection Equipment
Potentiometers, Variable Resistors
Circuit Protection
Crystals and Oscillators
Hardware, Fasteners, Accessories
Connectors, Interconnects
View more