Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 5.3A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 29nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Series: FETKY™
Input Capacitance (Ciss) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V
Specifications
| Parameter |
Maximum |
Units |
| ID @ TA = 25°C |
Continuous Drain Current, VGS @ -4.5V |
-5.3 |
A |
| ID @ TA = 70°C |
-4.3 |
| IDM |
Pulsed Drain Current |
-4.3 |
| PD @TA = 25°C |
Power Dissipation |
2.0 |
W |
| PD @TA = 70°C |
1.3 |
|
Linear Derating Factor |
16 |
mW/°C |
| VGS |
Gate-to-Source Voltage |
± 12 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to +150 |
°C |
DescriptionThe FETKY family IRF7322D1 of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 IRF7322D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
IRF7322D1 Data Sheet
