IRF7331

MOSFET 2N-CH 20V 7A 8-SOIC

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SeekIC No. : 003429891 Detail

IRF7331: MOSFET 2N-CH 20V 7A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7331
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V Gate-Source Cutoff Voltage : - 4.5 V
Current - Continuous Drain (Id) @ 25° C: 7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1340pF @ 16V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 7A
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Input Capacitance (Ciss) @ Vds: 1340pF @ 16V
Packaging: Tube


Description

The IRF7331 is real-time clocks for microcomputers that can be connected directly to data buses of 16 bit CPUs. The features of IRF7331 are: (1)ultra low on-resistance; (2)dual N-channel MOSFET; (3)surface mount; (4)available in tape & reel.

The following is about the absolute maximum ratings of IRF7331: (1)drain-source voltage: 20V; (2)continuous drain current, VGS @ 4.5V: 7.0A; (3)continuous drain current, VGS @ 4.5V: 5.5A; (4)pulsed drain current: 28A; (5)power dissipation: 2.0W; (6)linear derating factor: 16,W/; (7)storage junction temperature range: -55 to +150.

The electrical characteristics of the IRF7331 are: (1)drain-source breakdown voltage: 20V min at VGS=0V; (2)gate thresholad voltage: 0.6V min and 1.2V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=12V; (4)gate-source leakage reverse: -100nA max at VGS=-12V; (5)total gate charge: 13nC min and 20nC max at ID=21A; (6)turn-on delay time: 7.6ns typ; (7)turn-off delay time: 110ns typ.






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