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IRF7335D1PbF

Features: ·Co-Pack Dual N-channel HEXFET Power MOSFET® and Schottky Diode·Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output·Low Conduction Losses·Low Switching Losses·Low Vf Schottky Rectifier·Lead-FreePinoutSpecifications Symbol Parameter Max. Units VDS Drain...

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SeekIC No. : 004376730 Detail

IRF7335D1PbF: Features: ·Co-Pack Dual N-channel HEXFET Power MOSFET® and Schottky Diode·Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output·Low Conduction Losses·Low Switching Losses·Low Vf Scho...

IRF7335D1PbF Data Sheet

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Part Number:
IRF7335D1PbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Co-Pack Dual N-channel HEXFET  Power MOSFET® and Schottky Diode
·Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output
·Low Conduction Losses
·Low Switching Losses
·Low Vf Schottky Rectifier
·Lead-Free


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Max.
Units
VDS Drain-Source Voltage
30
V
ID @ TA = 25 Continuous Drain Current,VGS @ 10V
10
A
ID @ TA = 70 Continuous Drain Current,VGS @ 10V
8.1
IDM Pulsed Drain Current
81
PD @TC= 25 Power Dissipation
2.1
W
PD @TC = 70 Power Dissipation
1.3
W
  Linear Derating Factor
0.02
W/
VGS Gate-to-Source Voltage
±12
  
EAS (6 sigma) Single Pulse Avalanche Energy
20
  
TJ Operating Junction and
-40 to+175
TSTG Storage Temperature RangeSoldering
Temperature for 10 seconds
300



Description

The FETKYTM  family of Co-Pack HEXFET® MOSFETs and Schottky diodes IRF7335D1PbF offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET® MOSFETs combined with low forward drop Schottky  results in an extremely efficient device suitable for a wide variety of portable electronics applications.

The SO-14 IRF7335D1PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board space. Internal connections enable easier board layout design with reduced stray inductance.




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