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IRF7341

MOSFET 2N-CH 55V 4.7A 8-SOIC

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SeekIC No. : 004376733 Detail

IRF7341: MOSFET 2N-CH 55V 4.7A 8-SOIC

IRF7341 Data Sheet

floor Price/Ceiling Price

US $ .65~.65 / Piece | Get Latest Price
Part Number:
IRF7341
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~380
  • Unit Price
  • $.65
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

*Generation V Technology
* Ultra Low On-Resistance
* Dual N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching




Pinout

Connection Diagram




Specifications

Parameter Max. Units
VDS Drain- Source Voltage 55 V
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 4.7 A
ID @ TC = 70 Continuous Drain Current, VGS @ 10V 3.8
IDM Pulsed Drain Current 38
PD @TC = 25 Power Dissipation 2.0 W
PD @TC = 70 Power Dissipation 1.3
Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy 72
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fifth Generation HEXFETs IRF7341 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7341 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






Parameters:

Technical/Catalog InformationIRF7341
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C4.7A
Rds On (Max) @ Id, Vgs50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 740pF @ 25V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7341
IRF7341



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