Position: Home  > All Categories> Integrated Circuits (ICs) > IRF7341Q

IRF7341Q

Specifications Parameter Max. Units VDS Drain-Source Voltage 55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.1 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.2 IDM Pulsed Drain Current 42 PD @TA = 25°C Maximum Power...

product image

IRF7341Q Picture
See larger image
SeekIC No. : 004376734 Detail

IRF7341Q: Specifications Parameter Max. Units VDS Drain-Source Voltage 55 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.1 A ID @ TA = 70°C Continuous Dr...

IRF7341Q Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF7341Q
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Specifications

Parameter
Max.
Units
VDS
 Drain-Source Voltage
55
V
ID @ TA = 25°C
 Continuous Drain Current, VGS @ 10V
5.1
A
ID @ TA = 70°C
 Continuous Drain Current, VGS @ 10V
4.2
IDM
 Pulsed Drain Current
42
PD @TA = 25°C
 Maximum Power Dissipation
2.4
W
PD @TA = 70°C
 Maximum Power Dissipation
1.7
W
 Linear Derating Factor
16
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
 Single Pulse Avalanche Energy
140
mJ
IAR
 Avalanche Current
5.1
A
EAR
 Repetitive Avalanche Energy
See Fig. 14, 15, 16
mJ
TJ , TSTG
 Junction and Storage Temperature Range
-55 to + 175
°C



Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET's  IRF7341Q in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits com-bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The 175°C rating IRF7341Q for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Tapes, Adhesives
803
AC452-2
Optoelectronics
SFH7770
TLP423J
View more