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IRF7342D2

Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.7 IDM Pulsed Drain Current  -27 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70...

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IRF7342D2: Specifications Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -2.7 IDM P...

IRF7342D2 Data Sheet

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Part Number:
IRF7342D2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Max.
Units
ID @ TA = 25°C
 Continuous Drain Current, VGS @ -10V
-3.4
A
ID @ TA= 70°C
 Continuous Drain Current, VGS @ -10V
-2.7
IDM
 Pulsed Drain Current 
-27
PD @TA = 25°C
 Power Dissipation
2.0
W
PD @TA = 70°C
 Power Dissipation
1.3
W
 Linear Derating Factor
16
mW/°C
VGSM
 Gate-to-Source Voltage
± 20
V

dv/dt

 Peak Diode Recovery dv/dt ➁

-5.0

V/ns

TJ, TSTG
 Junction and Storage Temperature Range
-55 to + 150
°C





Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes IRF7342D2 offer the designer an innovative board space saving solution for switching regulator and
power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7342D2 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.






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