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MFG:International Rectifier (VA) Category:Discrete Semiconductor Products

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Category: Discrete Semiconductor Products

MFG: International Rectifier (VA)

Descriptions: MOSFET 2P-CH 55V 3.4A 8-SOIC

Price Break

1
10
100
250
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1000

Unit Price

1.47000
.91100
.66640
.62384
.58918
.55202

Extended Price

1.47
9.11
66.64
155.96
294.59
552.02

(All prices are in USD) Prices for reference only

MOSFET 2P-CH 55V 3.4A 8-SOIC

Technical/Catalog Information	IRF7342TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	3.4A
Rds On (Max) @ Id, Vgs	105 mOhm @ 3.4A, 10V
Input Capacitance (Ciss) @ Vds	690pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7342TRPBF IRF7342TRPBF IRF7342PBFCT ND IRF7342PBFCTND IRF7342PBFCT

IRF034
PDF/DataSheet Download

IRF7342TR
MOSFET 2P-CH 55V 3.4A 8-SOIC
IRF7342QTRPBF
MOSFET P-CH DUAL 55V 8-SOIC
IRF7342QPbF
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7342QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...
IRF7342Q
IRF7342PbF
Fifth Generation HEXFETs IRF7342PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow...
IRF7342D2TRPBF
MOSFET P-CH 55V 3.4A 8-SOIC

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