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IRF7343

MOSFET N+P 55V 3.4A 8-SOIC

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SeekIC No. : 004376740 Detail

IRF7343: MOSFET N+P 55V 3.4A 8-SOIC

IRF7343 Data Sheet

floor Price/Ceiling Price

US $ .61~.61 / Piece | Get Latest Price
Part Number:
IRF7343
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~475
  • Unit Price
  • $.61
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

*Generation V Technology
* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Fully Avalanche Rated




Pinout

Connection Diagram




Specifications

Parameter Max. Units
N-Channel P-Channel
VSD Drain-to-Source Voltage 55 -55 V
ID @ TA = 25 Continuous Drain Current, VGS @ 10V 4.7 -3.4 A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V 3.8 -2.7
IDM Pulsed Drain Current 38 -27
PD @TA = 25 Maximum Power Dissipation 2.0 W
PD @TA = 70 Maximum Power Dissipation 1.3 W
EAS Single Pulse Avalanche EnergyÉ 72 114 mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 mJ
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150





Description

Fifth Generation HEXFETs IRF7343 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF7343 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.






Parameters:

Technical/Catalog InformationIRF7343
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C4.7A, 3.4A
Rds On (Max) @ Id, Vgs50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 690pF @ 25V
Power - Max2W
PackagingBulk
Gate Charge (Qg) @ Vgs36nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET Feature*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7343
IRF7343



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