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Part Number: IRF7343

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRF7343 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

IRF7343 Maximum Ratings

  Parameter Max. Units
N-Channel P-Channel
VSD Drain-to-Source Voltage 55 -55 V
ID @ TA = 25 Continuous Drain Current, VGS @ 10V 4.7 -3.4 A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V 3.8 -2.7
IDM Pulsed Drain Current 38 -27
PD @TA = 25 Maximum Power Dissipation 2.0 W
PD @TA = 70 Maximum Power Dissipation 1.3 W
EAS Single Pulse Avalanche EnergyÉ 72 114 mJ
IAR Avalanche Current 4.7 -3.4 A
EAR Repetitive Avalanche Energy 0.20 mJ
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7343 Features

* Generation V Technology
* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Fully Avalanche Rated

IRF7343 Connection Diagram

IRF7343 Connection Diagram

IRF7343 datasheet

IRF7343
PDF/DataSheet Download

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Related Part Number

IRF7343 Relative Products

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