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Part Number: IRF7343IPbF

 

 

 

 

Description: Fifth Generation HEXFETs from lntemational Rectifierutilize advanced processing techniques to achieveextremely low on-r...


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IRF7343IPbF General Description


Fifth Generation HEXFETs from lntemational Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.Thisbenefit,combined with the fast switching speed andruggedized devie design that HEXFET PowerMOSFETs are well known for,provrdes the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety ofpower applications. With these improvements,multiple devies can board space.The package isdesignedfor vapor phase,infra red,or wave solderingtechniques.

IRF7343IPbF Maximum Ratings

 
Parameter
Max.
Units
N-Channel
P-Channel
VDS Drain-Source Voltage
55
-55
V
ID@TA=25 Continuous Drain Current,VGS@10V
4.7
-3.4
A
ID@TA=70 Continuous Drain Current,VGS@10V
3.8
-2.7
IDM Pulsed Drain Current
38
-27
PD@TA=25 Maximum Power Dissipation
2.0
W
PD@TA=70 Maximum Power Dissipation
1.3
W
EAR Single Pule Avalanche Energy
72
114
mJ
IAR Avalanche Current
4.7
-3.4
A
EAR Repetitive Avalanche Energy
0.20
mJ
VGS Gate-to-Source Voltage
±20
V
dv/dt Peak Diode Recovery dv/dt
5.0
-5.0
V/ns
Tj,TSTG Junction and Storage Temperatature Range
-55 to +150

IRF7343IPbF Features

·Generation VTechnology
·Uual N and P Channel MOFET
·Surface Mount
·Lead-Free

IRF7343IPbF datasheet

IRF034
PDF/DataSheet Download

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Related Part Number

IRF7343IPbF Relative Products

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    Fifth Generation HEXFETs IRF7343 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...

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    Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7342QPbF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...

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