Configuration
:
Maximum Operating Temperature
:
Packaging
:
Mounting Style
: SMD/SMT
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: SOIC-8
Drain-Source Breakdown Voltage
: 55 V
Transistor Polarity
: N and P-Channel
Resistance Drain-Source RDS (on)
: 65 mOhms
Continuous Drain Current
: 4.7 A
Features: ·Generation VTechnology
·Uual N and P Channel MOFET
·Surface Mount
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
|
N-Channel |
P-Channel |
| VDS |
Drain-Source Voltage |
55 |
-55 |
V |
| ID@TA=25 |
Continuous Drain Current,VGS@10V |
4.7 |
-3.4 |
A |
| ID@TA=70 |
Continuous Drain Current,VGS@10V |
3.8 |
-2.7 |
| IDM |
Pulsed Drain Current |
38 |
-27 |
| PD@TA=25 |
Maximum Power Dissipation |
2.0 |
W |
| PD@TA=70 |
Maximum Power Dissipation |
1.3 |
W |
| EAR |
Single Pule Avalanche Energy |
72 |
114 |
mJ |
| IAR |
Avalanche Current |
4.7 |
-3.4 |
A |
| EAR |
Repetitive Avalanche Energy |
0.20 |
mJ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
-5.0 |
V/ns |
| Tj,TSTG |
Junction and Storage Temperatature Range |
-55 to +150 |
|
DescriptionFifth Generation HEXFETs IRF7343IPbF from lntemational Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.Thisbenefit,combined with the fast switching speed andruggedized devie design that HEXFET PowerMOSFETs are well known for,provrdes the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 IRF7343IPbF has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple-die capability making it ideal in a variety ofpower applications. With these improvements,multiple devies can board space.The package isdesignedfor vapor phase,infra red,or wave solderingtechniques.
Parameters: | Technical/Catalog Information | IRF7343IPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A, 3.4A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 690pF @ 25V |
| Power - Max | 2W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 36nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7343IPBF
IRF7343IPBF
|
IRF7343IPBF Data Sheet
