IRF7343PBF

Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : 55 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 65 mOhms
Continuous Drain Current : 4.7 A


Features:






Specifications






Description

      The IRF7343PbF has the following features including generation V technology;ultra low on-resistance;dual N and P channel mosfet;surface mount;fully avalanche rated;lead-free.
      Sensitivity IRF7343PbF is defined as the average signal level measured at the input necessary to achieve a bit error ratio of 0.01 where the input signal is a return to zero pulse with an average duty cycle of 50%, 1kB/s data rate. Equivalent to -103dBm for 50ohm input impedance. Does not include insertion loss of SAW filter at RF input but does include IF filter of 470kHz 3dB bandwidth and a data filter bandwidth of 5kHz. This equates closely to a measurement of tangential sensitivity. The active polarity of CLPDM and SHP (active high or active low) can be chosen through the serial interface, refer to serial interface for details. The default value of CLPDM and SHP is active low. However, right after power on, this value is unknown. For this reason, it must be set to the appropriate value by using the serial interface, or reset to the default value by the RESET pin. The description and timing diagrams in this data sheet are all based on the polarity of active low (default value).
      The information IRF7343PbF provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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Parameters:

Technical/Catalog Information	IRF7343PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	4.7A, 3.4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7343PBF IRF7343PBF