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MFG:International Rectifier (VA) Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: International Rectifier (VA)

Descriptions: MOSFET N+P 55V 3.4A 8-SOIC

Price Break

1
10
100
250
500
1000

Unit Price

1.39000
.81200
.55550
.49980
.46786
.44189

Extended Price

1.39
8.12
55.55
124.95
233.93
441.89

(All prices are in USD) Prices for reference only

MOSFET N+P 55V 3.4A 8-SOIC

Technical/Catalog Information	IRF7343TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	4.7A, 3.4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7343TRPBF IRF7343TRPBF IRF7343PBFDKR ND IRF7343PBFDKRND IRF7343PBFDKR

IRF034
PDF/DataSheet Download

IRF7343TR
MOSFET N+P 55V 3.4A 8-SOIC
IRF7343QTRPBF
MOSFET N/P-CH 55V 8-SOIC
IRF7343QPBF
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's IRF7343QPBF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...
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Fifth Generation HEXFETs IRF7343IPbFfrom lntemational Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.Thisbenefit,combined with the fast switching speed andruggedized devie design that HEXFET PowerMOSFET...

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