MFG:1000 Package Cooled:IR D/C:SOP-8
MFG: 1000
Package Cooled: IR
D/C: SOP-8
Description: These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize a...
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
| Parameter |
Max. |
Units | ||
| N-Channel | P-Channel | |||
| VdS | Drain-to-Source Voltage |
100 |
-100 |
A |
| ID @ Ta= 25 | Continuous Drain Current, VGS @ 10V |
2.1 |
-1.5 | |
| ID @ Ta = 70 | Continuous Drain Current, VGS @ 10V |
1.7 |
-1.2 | |
| IDM | Pulsed Drain Current |
8.4 |
-6.0 | |
| PD @ Ta = 25 | Power Dissipation |
2.0 |
W | |
| Linear Derating Factor |
0.016 |
W/ | ||
| EAS | Single Pulse Avalanche Energy |
35 |
51 |
mJ |
| VGS | Gate-to-Source Voltage |
± 20 |
± 20 |
V |
| dv/dt | Peak Diode Recovery dv/dt |
4.0 |
4.3 |
V/ns |
| TJ ,TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
||
IRF034
PDF/DataSheet Download
These dual N and P channel HEXFET® power MOSFETs IRF7350 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi...
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