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Part Number: IRF7353D1PbF

 

 

 

 

Description: The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board s...


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IRF7353D1PbF General Description


The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

IRF7353D1PbF Maximum Ratings

Parameter Maximum Units
ID @ TA = 25 Continuous Drain Current 6.5 A
ID @ TA = 70 5.2
IDM Pulsed Drain Current 52
PD @TA = 25 Power Dissipation 2.0 W
PD @TA = 70 1.3
  Linear Derating Factor 16 mW/
VGS Gate-to-Source Voltage ± 20 V
dv/d Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150

IRF7353D1PbF Features

· Co-packaged HEXFET® Power MOSFET and Schottky Diode
· Ideal For Buck Regulator Applications
· N-Channel HEXFET
· Low VF Schottky Rectifier
· Generation 5 Technology
· SO-8 Footprint
· Lead-Free

IRF7353D1PbF datasheet

IRF034
PDF/DataSheet Download

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