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MFG:IR  Package Cooled:06+  D/C:SO-8  

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Part Number: IRF7353D2

 

MFG: IR

Package Cooled: 06+

D/C: SO-8

Description: The FETKYTM family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offe...


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IRF7353D2 General Description


The FETKYTM family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

IRF7353D2 Maximum Ratings

Parameter Maximum Units
ID @ TA = 25 Continuous Drain Current 6.5 A
ID @ TA = 70 5.2
IDM Pulsed Drain Current 52
PD @TA = 25 Power Dissipation 2.0 W
PD @TA = 25 1.3
  Linear Derating Factor 16 mW/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to +150

IRF7353D2 Features

* Co-Pack HEXFET® Power MOSFET and
   Schottky Diode
* Ideal For Buck Regulator Applications
* N-Channel HEXFET power MOSFET
* Low VF Schottky Rectifier
* Generation 5 Technology
* SO-8 Footprint

IRF7353D2 Connection Diagram

IRF7353D2 Connection Diagram

IRF7353D2 datasheet

IRF7353D2
PDF/DataSheet Download

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