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Part Number: IRF7353D2PbF
Description: The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer a...


Description: The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer a...
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
| Symbol | Parameter | Max. | Units |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 6.5 | V |
| ID @ TC = 70 | Continuous Drain Current, VGS @ 10V | 5.2 | V |
| IDM | Pulsed Drain Current | 52 | A |
| PD @TC = 25 | Power Dissipation |
2.0 |
A |
| PD @TA = 70 | Linear Derating Factor | 1.6 | A |
| 16 | |||
| VGS | Gate-to-Source Voltage | ± | W |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | W |
| TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 | mW/ |
IRF034
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