IRF7353D2PBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Single Dual Drain
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 46 mOhms


Features:

· Co-Pack HEXFET® Power MOSFET and Schottky Diode
· Ideal For Buck Regulator Applications
· N-Channel HEXFET power MOSFET
· Low VF Schottky Rectifier
· Generation 5 Technology
· SO-8 Footprint
· Lead-Free


Specifications

Symbol	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	6.5	V
ID @ TC = 70	Continuous Drain Current, VGS @ 10V	5.2	V
IDM	Pulsed Drain Current	52	A
PD @TC = 25	Power Dissipation	2.0	A
PD @TA = 70	Linear Derating Factor	1.6	A
		16
VGS	Gate-to-Source Voltage	±	W
dv/dt	Peak Diode Recovery dv/dt	-5.0	W
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	mW/

Description

The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

The SO-8 IRF7353D2PbF has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.

Parameters:

Technical/Catalog Information	IRF7353D2PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	29 mOhm @ 5.8A, 10V
Input Capacitance (Ciss) @ Vds	650pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	33nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7353D2PBF IRF7353D2PBF