IRF737LC

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.75 Ohms
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 6.1 A


Features:

* Reduced Gate Drive Requirement
* Enhanced 30V VGS Rating
* Reduced CISS, COSS, CRSS
* Extremely High Frequency Operation
* Repetitive Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	6.1	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	3.9
IDM	Pulsed Drain Current ƒ	24
PD @TC = 25	Power Dissipation	74	W
	Linear Derating Factor	0.59	W/
VGS	Gate-to-Source Voltage	±30	V
EAS	Single Pulse Avalanche Energy	120	mJ
IAR	Avalanche Current	6.1	A
EAR	Repetitive Avalanche Energy	7.4	mJ
dv/dt	Peak Diode Recovery dv/dt	3.4	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency of the IRF737LC are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.

These device of the IRF737LC improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.