MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 3.6 A |
Configuration : | Dual | Mounting Style : | SMD/SMT |
Package / Case : | SOIC-8 |
Parameter | Max. | Units | |
VDS | Drain-to-Source Voltage | 80 | V |
VGS | Gate-to-Source Voltage | ± 20 | V |
ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 3.6 | A |
ID @ TA = 100°C | Continuous Drain Current, VGS @ 10V | 2.9 | A |
IDM | Pulsed Drain Current | 29 | A |
PD @TA = 25°C | Maximum Power Dissipation | 2.0 | W |
Linear Derating Factor | 0.02 | W/°C | |
dv/dt | Peak Diode Recovery dv/dt | 2.3 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
Specifically designed for Automotive applications of the IRF7380QPbF. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount IRF7380QPbF can dramatically reduce board space and is also available in Tape & Reel.
Technical/Catalog Information | IRF7380QPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25° C | 3.6A |
Rds On (Max) @ Id, Vgs | 73 mOhm @ 2.2A, 10V |
Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
Power - Max | 2W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7380QPBF IRF7380QPBF |