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MFG:IR  Package Cooled:SOP-8  D/C:07+  

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Part Number: IRF7380QPbF

 

MFG: IR

Package Cooled: SOP-8

D/C: 07+

Description: Specifically designed for Automotive applications. Additional features of these Automotive qualified H...


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IRF7380QPbF General Description


Specifically designed for Automotive applications. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

IRF7380QPbF Maximum Ratings

  Parameter Max. Units
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6 A
ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 2.9 A
IDM Pulsed Drain Current � 29 A
PD @TA = 25°C Maximum Power Dissipation 2.0 W
  Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt 2.3 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150 °C

IRF7380QPbF Features

· Advanced Process Technology
· Ultra Low On-Resistance
· N Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 150°C Operating Temperature
· Automotive [Q101] Qualified
· Lead-Free

IRF7380QPbF datasheet

IRF7380QPBF
PDF/DataSheet Download

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