IRF7401

Features: *Generation V Technology* Ultra Low On-Resistance* N-Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter Max. Units ID@TA=25 10 Sec. Pulsed Drain Current, VGS @ 4.5V -4.0 A ID@TA=25 Continuous ...

product image

IRF7401 Picture
SeekIC No. : 004376751 Detail

IRF7401: Features: *Generation V Technology* Ultra Low On-Resistance* N-Channel Mosfet* Surface Mount* Available in Tape & Reel* Dynamic dv/dt Rating* Fast SwitchingPinoutSpecifications Parameter ...

floor Price/Ceiling Price

Part Number:
IRF7401
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching



Pinout

  Connection Diagram


Specifications

  Parameter Max. Units
ID @ TA = 25 10 Sec. Pulsed Drain Current, VGS @ 4.5V -4.0 A
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V -3.6
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V -2.9
IDM Pulsed Drain Current -14
PD @TA = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

Fifth Generation HEXFETs of the IRF7401 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The IRF7401 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Sensors, Transducers
Prototyping Products
DE1
Potentiometers, Variable Resistors
Audio Products
Undefined Category
View more