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Part Number: IRF7401

 

MFG: IOR

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRF7401 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

IRF7401 Maximum Ratings

  Parameter Max. Units
ID @ TA = 25 10 Sec. Pulsed Drain Current, VGS @ 4.5V -4.0 A
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V -3.6
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V -2.9
IDM Pulsed Drain Current -14
PD @TA = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7401 Features

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel Mosfet
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching

IRF7401 Connection Diagram

IRF7401 Connection Diagram

IRF7401 datasheet

IRF7401
PDF/DataSheet Download

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