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MFG:IOR  Package Cooled:SMD-8  

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IRF Series Datasheet download

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Part Number: IRF7402

 

MFG: IOR

Package Cooled: SMD-8

 

Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced pr...


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IRF7402 General Description


Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application.

IRF7402 Maximum Ratings

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V 6.8 A
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V 5.4
IDM Pulsed Drain Current 54
PD @TA = 25 Power Dissipation 2.5 W
PD @TA = 70 Power Dissipation 1.6
  Linear Derating Factor 0.02 W/
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7402 Features

* Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Very Small SOIC Package
* Low Profile (<1.1mm)
* Available in Tape & Reel
* Fast Switching

IRF7402 Connection Diagram

IRF7402  Connection Diagram

IRF7402 datasheet

IRF7402
PDF/DataSheet Download

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