Purchase IRF7403, In-stock IRF7403 From SeekIC.
MFG:IR Package Cooled:SMD
Part Number: IRF7403
MFG: IR
Package Cooled: SMD
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
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IRF7403
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Suppliers
DataSheet
General Description
IRF7403 General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
IRF7403 Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ -10V | 9.7 | A |
| ID @ TA = 25°C | Continuous Drain Current, VGS @ 10V | 8.5 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ -10V | 5.4 | A |
| IDM | Pulsed Drain Current | 34 | A |
| PD @TA = 25°C | Maximum Power Dissipation | 2.5 | W |
| Linear Derating Factor | 0.02 | mW/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ , TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
IRF7403 Features
· Generation V Technology
·Ultra Low On-Resistance
· N-Channel Mosfet
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Fast Switching
·Ultra Low On-Resistance
· N-Channel Mosfet
· Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Fast Switching
IRF7403
PDF/DataSheet Download
- Datasheet: IRF7403
- File Size: 119546 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
IRF7403 Relative Products
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Fifth Generation HEXFET® power MOSFETs of the IRF7402PbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devic...
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IRF7402
Fifth Generation HEXFET® power MOSFETs of the IRF7402from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d...
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IRF7401TRPBF
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