MOSFET N-Chan 400V 10 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 10 A | ||
| Resistance Drain-Source RDS (on) : | 0.55 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-262 | Packaging : | Tube |
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
10 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
6.3 | |
|
IDM |
Pulsed Drain Current |
40 | |
|
PD @TA = 25°C |
Power Dissipation |
3.1 |
W |
|
PD @TC = 25°C |
Power Dissipation |
125 |
|
| Linear Derating Factor |
1.0 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
± 30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.9 |
V/ns |
|
TJ |
Operating Junction and |
-55 to + 150 |
°C |
|
TSTG |
Storage Temperature Range | ||
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |