MOSFET N-Chan 400V 10 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.55 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Tube |
Symbol | Parameter | Value | Uni t |
VDS | Drain-source Voltage (VGS = 0) | 400 | V |
VDGR | Drain- gate Voltage (RGS = 20 kW) | 400 | V |
VGS | Gate-source Voltage | ± 20 | V |
ID | Drain Current (continuous) at Tc = 25 | 10 | A |
ID | Drain Current (continuous) at Tc = 100 | 6.3 | A |
IDM(•) | Drain Current (pulsed) | 40 | A |
Ptot | Total Dissipation at Tc = 25 | 125 | W |
Derating Factor | 1.0 | W/ | |
dv/dt(1) | Peak Diode Recovery voltage slope | 4.0 | V/ns |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
This power MOSFET of the IRF740S is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.