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MFG:IR  Package Cooled:TO-263  D/C:09+  

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Part Number: IRF740S

 

MFG: IR

Package Cooled: TO-263

D/C: 09+

Description: This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM<...


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IRF740S General Description


This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.

IRF740S Maximum Ratings

Symbol Parameter Value Uni t
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain- gate Voltage (RGS = 20 kW) 400 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 10 A
ID Drain Current (continuous) at Tc = 100 6.3 A
IDM(•) Drain Current (pulsed) 40 A
Ptot Total Dissipation at Tc = 25 125 W
  Derating Factor 1.0 W/
dv/dt(1) Peak Diode Recovery voltage slope 4.0 V/ns
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150

IRF740S Features

* TYPICAL RDS(on) = 0.48 W
* EXTREMELY HIGH dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* VERYLOW INTRINSIC CAPACITANCES
* GATECHARGE MINIMIZED
* FOR THROUGH-HOLE VERSION CONTACT
   SALES OFFICE

IRF740S Typical Application

* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM,
   INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRF740S datasheet

IRF740S
PDF/DataSheet Download

  • Datasheet: IRF740S
  • File Size: 95927 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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Related Part Number

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