MOSFET N-Chan 400V 10 Amp
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
| Resistance Drain-Source RDS (on) : | 0.55 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263AB | Packaging : | Tube |
| Symbol | Parameter | Value | Uni t |
| VDS | Drain-source Voltage (VGS = 0) | 400 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 400 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 | 10 | A |
| ID | Drain Current (continuous) at Tc = 100 | 6.3 | A |
| IDM(•) | Drain Current (pulsed) | 40 | A |
| Ptot | Total Dissipation at Tc = 25 | 125 | W |
| Derating Factor | 1.0 | W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.0 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
This power MOSFET of the IRF740S is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.