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MFG:IR  Package Cooled:SOP-8  D/C:09+  

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Part Number: IRF7410

 

MFG: IR

Package Cooled: SOP-8

D/C: 09+

Description: These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced pro...


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IRF7410 General Description


These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

IRF7410 Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage -20 V
ID @ TC = 25 Continuous Drain Current, VGS @ -4.5V -16 A
ID @ TC = 70 Continuous Drain Current, VGS @ -4.5V -13
IDM Pulsed Drain Current -65
PD @TC = 25 Power Dissipation 2.5 W
PD @TC = 70 Power Dissipation 1.6
  Linear Derating Factor 20 W/
VGS Gate-to-Source Voltage ±8 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7410 Features

* Ultra Low On-Resistance
* P-Channel MOSFET
* Surface Mount
* Available in Tape & Reel

IRF7410 Connection Diagram

IRF7410 Connection Diagram

IRF7410 datasheet

IRF7410
PDF/DataSheet Download

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