IRF7410PBF

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Resistance Drain-Source RDS (on) : 7 mOhms
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : - 12 V
Gate-Source Breakdown Voltage : 8 V
Continuous Drain Current : - 16 A


Features:

  Ultra Low On-Resistance
  P-Channel MOSFET
  Surface Mount
  Available in Tape & Reel
 Lead-Free


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-12	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-16	A
ID @ TA= 70	Continuous Drain Current, VGS @ -4.5V	-13
IDM	Pulsed Drain Current	-65
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6
	Linear Derating Factor	20	mW/
VGS	Gate-to-Source Voltage	±8	V
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150

Description

These P-Channel HEXFET
Power MOSFETs IRF7410PbF from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

The SO-8 IRF7410PbF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques