IRF7413ZPBF

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Resistance Drain-Source RDS (on) : 13 mOhms
Continuous Drain Current : 13 A


Features:

·Ultra-Low Gate Impedance
·Very Low RDS(on)
·Fully Characterized Avalanche Voltage and Current
·100% Tested for RG
·Lead-Free


Application

·Control FET for Notebook Processor Power
·Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	13	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	10
IDM	Pulsed Drain Current	100
PD @TA = 25	Power Dissipation	2.5	W
PD @TA = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Parameters:

Technical/Catalog Information	IRF7413ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	10 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1210pF @ 15V
Power - Max	2.5W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7413ZPBF IRF7413ZPBF